Cation-based resistive memory

Proceedings - International NanoElectronics Conference, INEC

Volumn , Issue , 2011, Pages

  Kozicki, Michael N ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

Ionic memory; multi level cell and active and passive arrays; Programmable Metallization Cell; resistance change

Indexed keywords

COPPER-CONTAINING OXIDES; HIGH RESISTANCE; INERT ELECTRODES; ION TRANSPORTS; ION-CONDUCTING; IONIC MEMORY; METALLIC BRIDGE; MULTI-LEVEL; MULTI-LEVEL CELL AND ACTIVE AND PASSIVE ARRAYS; ON-STATE RESISTANCE; PASSIVE STRUCTURES; PROGRAMMABLE METALLIZATION CELLS; RESISTANCE CHANGE; RESISTANCE STATE; SI ELECTRODES;

CONDUCTIVE FILMS; COPPER; DISTILLATION; GERMANIUM; NANOELECTRONICS; PHASE CHANGE MEMORY; REDOX REACTIONS; SILICON COMPOUNDS; SILVER;

POSITIVE IONS;

EID: 80053002387     PISSN: 21593523     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/INEC.2011.5991737     Document Type: Conference Paper

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