Total ionizing dose (TID) effects on TaOx-based resistance change memory

IEEE Transactions on Electron Devices

Volumn 58, Issue 8, 2011, Pages 2800-2804

  Zhang, Lijie ^a   Huang, Ru ^a   Gao, Dejin ^a   Yue, Pan ^a   Tang, Poren ^a   Tan, Fei ^a   Cai, Yimao ^a   Wang, Yangyuan ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Defect; radiation; resistive random access memory (RRAM); total ionizing dose (TID)

Indexed keywords

DEFECT GENERATION; FAILURE RATE; HIGH PROBABILITY; HIGH RESISTANCE; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; MULTILEVEL CELL; RANDOM ACCESS MEMORIES; RESISTANCE CHANGE; RESISTIVE SWITCHING MEMORIES; SPACE SYSTEM APPLICATIONS; THICK OXIDES; TOTAL IONIZING DOSE (TID); TOTAL IONIZING DOSE EFFECTS;

DEFECTS; FLASH MEMORY; IMPACT RESISTANCE; IONIZING RADIATION; OXIDE FILMS; RADIATION EFFECTS;

RANDOM ACCESS STORAGE;

EID: 79960837285     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2148121     Document Type: Article

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