Proton irradiation effects on resistive random access memory with ZrO x HfO x stacks

IEEE Transactions on Nuclear Science

Volumn 58, Issue 6 PART 2, 2011, Pages 3317-3320

  Lee, Daeseok ^a   Lee, Joonmyoung ^a   Jung, Seungjae ^a   Kim, Seonghyun ^a   Park, Jubong ^a   Biju, K P ^a   Choe, Minhyeok ^a   Lee, Takhee ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Low frequency noise; proton; radiation effect; ReRAM

Indexed keywords

ACTIVE LAYER; CONDUCTING PATHS; ELECTRICAL CONDUCTION MECHANISMS; FORMING PROCESS; HIGH-RESISTANCE STATE; INITIAL CONDITIONS; INITIAL STATE; IRRADIATION EFFECT; LEAKAGE PATHS; LOW-FREQUENCY NOISE; LOW-RESISTANCE STATE; NOISE ANALYSIS; RADIATION-INDUCED; RERAM; RESISTIVE RANDOM ACCESS MEMORY;

PROTON IRRADIATION; PROTONS; RANDOM ACCESS STORAGE; ZIRCONIUM ALLOYS;

RADIATION EFFECTS;

EID: 83855163554     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2011.2165731     Document Type: Article

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