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Microelectronic Engineering

Volumn 107, Issue , 2013, Pages 1-5

DC and low-frequency noise behavior of the conductive filament in bipolar HfO2-based resistive random access memory

(7) Maccaronio, V a Crupi, F a Procel, L M c Goux, L b Simoen, E b Trojman, L c Miranda, E d

a UNIVERSITY OF CALABRIA (Italy)

b IMEC (Belgium)

c UNIVERSIDAD SAN FRANCISCO DE QUITO (Ecuador)

d UNIVERSITAT AUTÒNOMA DE BARCELONA (Spain)

Author keywords

Hafnium oxide; Low frequency noise; Non volatile memory; Quantum point contact; Resistive RAM

Indexed keywords

CURRENT VOLTAGE CURVE; HIGH-RESISTANCE STATE; LOW-FREQUENCY NOISE; LOW-RESISTANCE STATE; NON-VOLATILE MEMORY; QUANTUM POINT CONTACT; RESISTIVE RAMS; RESISTIVE RANDOM ACCESS MEMORY;

DATA STORAGE EQUIPMENT; POINT CONTACTS; QUANTUM CHEMISTRY;

HAFNIUM OXIDES;

EID: 84875425926 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2013.02.076 Document Type: Article

Times cited : (14)

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