Impact of alpha particles on the electrical characteristics of TiO 2 memristors

IEEE Transactions on Nuclear Science

Volumn 58, Issue 6 PART 1, 2011, Pages 2838-2844

  Barnaby, H J ^a   Malley, S ^a   Land, M ^a   Charnicki, S ^a   Kathuria, A ^a   Wilkens, B ^b   Deionno, E ^c   Tong, W M ^d  

^a Arizona State University   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

^c AEROSPACE CORPORATION   (United States)

^d TransEL Corporation   (United States)

Author keywords

Alpha particles; displacement damage; memristor; TiO 2

Indexed keywords

APPARENT RADIATION; CURRENT CONDUCTION; DISPLACEMENT DAMAGES; ELECTRICAL CHARACTERISTIC; ELECTRICAL RESPONSE; FLUENCES; MEMRISTOR; NUMERICAL DEVICE SIMULATION; RADIATION EXPOSURE; RADIATION TRANSPORT; RADIATION-INDUCED; TIO; TRANSITION-METAL OXIDES; VACANCY DENSITY;

ALPHA PARTICLES; INTERFACES (MATERIALS); MEMRISTORS; METALLIC COMPOUNDS; OXYGEN VACANCIES; PASSIVE FILTERS; PLATINUM; RESISTORS; TITANIUM;

TITANIUM DIOXIDE;

EID: 83855163518     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2011.2168827     Document Type: Conference Paper

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