Non-volatile switching characteristics in wet-deposited Ag 2Se/GeSe double layers for resistive random access memory applications

Applied Physics Letters

Volumn 102, Issue 19, 2013, Pages

  Nam, Ki Hyun ^a   Kim, Jang Han ^a   Cho, Won Ju ^a   Chung, Hong Bay ^a  

^a Kwangwoon University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DOUBLE LAYERS; LOW-VOLTAGE; NON-VOLATILE; RESISTANCE RATIO; RESISTANCE SWITCHING; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE RANDOM ACCESS MEMORY (RERAM); SWITCHING CHARACTERISTICS;

AUGER ELECTRON SPECTROSCOPY; DEPOSITION; SEMICONDUCTING SELENIUM COMPOUNDS; X RAY DIFFRACTION;

SILVER;

EID: 84877940625     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4804557     Document Type: Article

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