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1
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84863020678
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x crossbar resistive RAM with excellent performance, reliability and low-energy operation
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x crossbar resistive RAM with excellent performance, reliability and low-energy operation,", IEEE International Electron Devices Meeting (IEDM), pp.31.6.1-31.6.4, (2011).
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Pourtois, G.16
Bender, H.17
Altimime, L.18
Wouters, D.J.19
Kittl, J.A.20
Jurczak, M.21
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2
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84870289656
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2/Hf 1T1R bipolar RRAM
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2/Hf 1T1R Bipolar RRAM,", IEEE Transactions on Electron Devices, Vol. 59, No. 12, pp. 3243-3249, (2012).
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3
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84857595344
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x based RRAM at low (<20μA) operative current and elevated (150°C) temperature
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x based RRAM at low (<20μA) operative current and elevated (150°C) temperature,", IEEE Integrated Reliability Workshop Final Report (IIRW), pp. 146-150, (2011).
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Low power and high speed bipolar switching with a thin reactive ti buffer layer in robust HfO2 based RRAM
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A novel operation scheme for oxide-based resistive-switching memory devices to achieve controlled switching behaviors
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79951846295
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Generic learning of TDDB applied to RRAM for improved understanding of conduction and switching mechanism through multiple filaments
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R. Degraeve, P.J. Roussel, L. Goux, D.J. Wouters, J.A. Kittl, L. Altimime, M. Jurczak and G. Groeseneken, "Generic learning of TDDB applied to RRAM for improved understanding of conduction and switching mechanism through multiple filaments,", IEEE International Electron Devices Meeting (IEDM), pp.28.4.1-28.4.4, (2010).
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Modeling and tuning the filament properties in RRAM metal oxide stacks for optimized stable cycling
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2 RRAM
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G-RTN) approach
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Random telegraph noise in flash memories - Model and technology scaling
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Scaling trends for random telegraph noise in deca-nanometer flash memories
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84870613393
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x RRAM in high resistive state
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2 stack ReRAM
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79951826963
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Electron trapping effect on the switching behavior of contact RRAM devices through random telegraph noise analysis
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Methodology for the statistical evaluation of the effect of random telegraph noise (RTN) on RRAM characteristics
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An electron conduction model of resistive memory for resistance dispersion, fluctuation, filament structures, and set/Reset mechanism
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