Noise characteristics of single-walled carbon nanotube network transistors

Nanotechnology

Volumn 19, Issue 28, 2008, Pages

  Kim, Un Jeong ^a   Kim, Kang Hyun ^b   Kim, Kyu Tae ^b   Min, Yo Sep ^c   Park, Wanjun ^d  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Korea University   (South Korea)

^c Konkuk University   (South Korea)

^d Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; CARBON; CIVIL AVIATION; COMPUTER NETWORKS; CUBIC BORON NITRIDE; DESORPTION; FIELD EFFECT TRANSISTORS; FULLERENES; GAS ADSORPTION; METAL ANALYSIS; METALLIZING; METROPOLITAN AREA NETWORKS; MICROFLUIDICS; MOLECULAR STRUCTURE; MOLECULES; NANOCOMPOSITES; NANOPORES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTECHNOLOGY; NANOTUBES; NETWORK PROTOCOLS; OXYGEN; PLASMA DEPOSITION; PLASMA DIAGNOSTICS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SINGLE-WALLED CARBON NANOTUBES (SWCN); TRANSISTORS; TUBES (COMPONENTS); VAPOR DEPOSITION; WIRELESS NETWORKS;

(1 1 0) SURFACE; 1 / F NOISE; CHANNEL AREA; FIELD EFFECTS; GAS MOLECULES; GEOMETRICAL COMPLEXITY; KEY FACTORS; METAL JUNCTIONS; MOBILE CARRIERS; NANO TUBE; NANOTUBE NETWORKS; NETWORK TRANSISTORS; NOISE CHARACTERISTICS; OXYGEN MOLECULES; PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD); SINGLE WALLED CARBON NANOTUBE (SWCNTA); SINGLE-WALLED CARBON NANOTUBES (SWCNTS);

CARBON NANOTUBES;

CARBON NANOTUBE; OXYGEN;

ADSORPTION; ARTICLE; DESORPTION; FIELD EFFECT TRANSISTOR; GEOMETRY; NOISE; PRIORITY JOURNAL;

EID: 44949254858     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/28/285705     Document Type: Article

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