Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO2 nanowire field-effect transistors

Applied Physics Letters

Volumn 102, Issue 5, 2013, Pages

  Joo, Min Kyu ^a,b   Huh, Junghwan ^b   Mouis, Mireille ^a   Park, So Jeong ^a,b   Jeon, Dae Young ^a,b   Jang, Doyoung ^c   Lee, Jong Heun ^b   Kim, Gyu Tae ^b   Ghibaudo, Gérard ^a  

^a IMEP LAHC   (France)

^b Korea University   (South Korea)

^c Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER NUMBER FLUCTUATION; CHANNEL ACCESS; ELECTRICAL PARAMETER; ELECTROSTATIC GATES; FUNCTION METHODS; LOW-FREQUENCY NOISE; NOISE MODELS; PASSIVATION LAYER;

CARRIER MOBILITY; FIELD EFFECT TRANSISTORS; NANOWIRES; PASSIVATION;

POLYMETHYL METHACRYLATES;

EID: 84874071030     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4788708     Document Type: Article

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