Surface and core contribution to 1/f-noise in InAs nanowire metal-oxide-semiconductor field-effect transistors

Applied Physics Letters

Volumn 103, Issue 3, 2013, Pages

  Persson, K M ^a   Malm, B G ^b   Wernersson, L E ^a  

^a LUND UNIVERSITY   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

FORWARD BIAS; INAS NANOWIRES; MATERIAL QUALITY; METAL-OXIDE; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; NORMALIZED NOISE; SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; SURFACE CHANNEL;

INTERFERENCE SUPPRESSION; MOSFET DEVICES;

NANOWIRES;

EID: 84881492355     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4813850     Document Type: Article

References (18)

1. D.-H. Kim, J. A. del Alamo, D. A. Antoniadis, and B. Brar, Tech. Dig.-Int. Electron Devices Meet. 2009, 35.4.1-35.4.4. 10.1109/IEDM.2009.5424268
2. C. P. Auth and J. D. Plummer, IEEE Electron Device Lett. 18, 74 (1997). 10.1109/55.553049
3. T. Tanaka, K. Tomioka, S. Hara, J. Motohisa, E. Sano, and T. Fukui, Appl. Phys. Express 3, 025003 (2010). 10.1143/APEX.3.025003
4. K.-M. Persson, M. Berg, M. Borg, J. Wu, H. Sjoland, E. Lind, and L.-E. Wernersson, in IEEE Device Research Conference (DRC), University City, PA, USA, 18-20 June (2012), pp. 195-196.
5. M. v. Haartman and M. Östling, Low-Frequency Noise in Advanced MOS Devices (Springer, Dordrecht, The Netherlands, 2007).
6. G. G. Sepideh, S. Johansson, B. M. Borg, E. Lind, K. A. Dick, and L.-E. Wernersson, Nanotechnology 23, 015302 (2012). 10.1088/0957-4484/23/1/015302
7. G. Astromskas, K. Storm, O. Karlström, P. Caroff, M. Borgström, and L.-E. Wernersson, J. Appl. Phys. 108, 054306 (2010). 10.1063/1.3475356
8. A. Khakifirooz, O. M. Nayfeh, and D. Antoniadis, IEEE Trans. Electron Devices 56, 1674 (2009). 10.1109/TED.2009.2024022
9. K.-M. Persson, E. Lind, A. Dey, C. Thelander, H. Sjöland, and L.-E. Wernersson, IEEE Electron Device Lett. 31, 428 (2010). 10.1109/LED.2010.2043637
10. J. Wu, E. Lind, R. Timm, M. Hjort, A. Mikkelsen, and L.-E. Wernersson, Appl. Phys. Lett. 100, 132905 (2012). 10.1063/1.3698094
11. B. Rajamohanan, I. Ok, S. Mujumdar, C. Hobbs, P. Majhi, R. Jammy, and S. Datta, IEEE Electron Device Lett. 33, 1237 (2012). 10.1109/LED.2012.2206010
12. P. Andrei, W. Kruppa, J. B. Boos, and B. R. Bennett, J. Appl. Phys. 106, 034504 (2009). 10.1063/1.3194312
13. M. Von Haartman, A.-C. Lindgren, P.-E. Hellstrom, G. B. Malm, S.-L. Zhang, and M. Ostling, IEEE Trans. Electron Devices 50, 2513 (2003). 10.1109/TED.2003.819258
14. M. R. Sakra and X. P. A. Gao, Appl. Phys. Lett. 93, 203503 (2008). 10.1063/1.3031701
15. C. J. Delker, S. Kim, M. Borg, L.-E. Wernersson, and D. B. Janes, IEEE Trans. Electron Devices 59, 1980 (2012). 10.1109/TED.2012.2194150
16. S. Christensson, I. Lundström, and C. Svensson, Solid-State Electron. 11, 797 (1968). 10.1016/0038-1101(68)90100-7
17. N. Li, E. S. Harmon, J. Hyland, D. B. Salzman, T. P. Ma, Y. Xuan, and P. D. Ye, Appl. Phys. Lett. 92, 143507 (2008). 10.1063/1.2908926
18. M. von Haartman, B. G. Malm, and M. Östling, IEEE Trans. Electron Devices 53, 836 (2006). 10.1109/TED.2006.870276