Low-frequency noise characterization of ZnO nanorod back-gate field-effect transistor structure

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 40, Issue 6, 2008, Pages 2147-2149

  Lee, Jungil ^a   Yu, Byung Yong ^a   Lee, Chul Ho ^b   Yi, Gyu Chul ^b   Hun Son, Seung ^a,c   Kim, Gyu Tae ^c   Ghibaudo, Gerard ^d  

^a Korea Institute of Science and Technology   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

^c Korea University   (South Korea)

^d IMEP LAHC   (France)

Author keywords

Field effect transistors; Low frequency noise; Surface states; ZnO nanorod

Indexed keywords

CARBON NANOTUBES; FIELD EFFECT TRANSISTORS; POWER SPECTRAL DENSITY; SEMICONDUCTOR DEVICES; ZINC OXIDE;

CURRENT DEPENDENCE; NOISE DENSITY; POWER INDEX; SURFACE STATES;

NANOSTRUCTURES;

EID: 41349094655     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2007.10.071     Document Type: Article

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