Trap evaluations of metal/oxide/silicon field-effect transistors with high-k gate dielectric using charge pumping method

Applied Physics Letters

Volumn 81, Issue 11, 2002, Pages 2050-2052

  Lee, Ga Won ^a   Lee, Jae Hee ^a   Lee, Hae Wang ^a   Park, Myoung Kyu ^a   Kang, Dae Gwan ^a   Youn, Hee Koo ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CAPTURE CROSS SECTIONS; CHARGE PUMPING METHOD; ELECTRICAL CHARACTERISTIC; FOWLER-NORDHEIM TUNNELING; GATE INSULATOR; GATE-LEAKAGE CURRENT; HIGH-K GATE DIELECTRICS; INTERFACE TRAPS; INVERSION LAYER; MEAN VALUES; SIMPLE METHOD; TRAP EVALUATION;

DIELECTRIC DEVICES; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; LEAKAGE CURRENTS; POWER CONVERTERS;

GATE DIELECTRICS;

EID: 79956042006     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1506776     Document Type: Article

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