Low-frequency noise behavior of junctionless transistors compared to inversion-mode transistors

Solid-State Electronics

Volumn 81, Issue , 2013, Pages 101-104

  Jeon, Dae Young ^a,c   Park, So Jeong ^a,c   Mouis, Mireille ^a   Barraud, Sylvain ^b   Kim, Gyu Tae ^c   Ghibaudo, Gérard ^a  

^a IMEP LAHC   (France)

^b CEA LETI   (France)

^c Korea University   (South Korea)

Author keywords

Bulk conduction; Carrier number fluctuations; Flat band voltage (Vfb); Junctionless transistors (JLTs); Low frequency (LF) noise; Trap density (Nt)

Indexed keywords

BULK CONDUCTION; CARRIER NUMBER FLUCTUATION; FLAT-BAND VOLTAGE; JUNCTIONLESS TRANSISTORS; LOW-FREQUENCY NOISE; TRAP DENSITY;

ELECTRONICS ENGINEERING; SOLID STATE DEVICES;

TRANSISTORS;

EID: 84874744922     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2012.12.003     Document Type: Article

References (15)

1. J.P. Colinge, C.W. Lee, A. Afzalian, N.D. Akhavan, R. Yan, and I. Ferain Nanowire transistors without junctions Nat Nanotechnol 5 2010 225 229
2. A.M. Ionescu Electronic devices: nanowire transistors made easy Nat Nanotechnol 5 2010 178 179
3. g down to 26 nm Elect Dev Lett, IEEE 32 2011 1170 1172
4. J.P. Colinge, C.W. Lee, I. Ferain, N.D. Akhavan, R. Yan, and P. Razavi Reduced electric field in junctionless transistors Appl Phys Lett 96 2010 073510
5. J.M. Sallese, N. Chevillon, C. Lallement, B. Iniguez, and F. Pregaldiny Charge-based modeling of junctionless double-gate field-effect transistors IEEE Trans Elect Dev 2011 1 10
6. A. Nazarov, I. Ferain, N.D. Akhavan, P. Razavi, R. Yu, and J. Colinge Random telegraph-signal noise in junctionless transistors Appl Phys Lett 98 2011 092111
7. Jeon D-Y, Park SJ, Mouis M, Berthome M, Barraud S, Kim G-T, et al. Electrical characterization and revisited parameter extraction methodology in junctionless transistors. In: Proceedings of EuroSOI conference, Montpellier, France, 2012, p. 109-110.
8. G. Ghibaudo, O. Roux, C. Nguyen-Duc, F. Balestra, and J. Brini Improved analysis of low frequency noise in field-effect MOS transistors Phys Status Solidi (a) 124 1991 571 581
9. G. Ghibaudo, and T. Boutchacha Electrical noise and RTS fluctuations in advanced CMOS devices Microelectron Reliab 42 2002 573 582 (Pubitemid 34498204)
10. M.V. Haartman, and M. Ostling Low-frequency noise in advanced MOS devices 2007 Springer Publishing Company Incorporated
11. P. Hurley, O. Engström, D. Bauza, and G. Ghibaudo Nanoscale CMOS: innovative materials modeling and characterization 2010 Wiley-IEEE Press [chapter 15.4]
12. Chroboczek J. Automatic, wafer-level, low frequency noise measurements for the interface slow trap density evaluation. In: ICMTS IEEE conference, 2003, p. 95-98.
13. D.K. Schroder Semiconductor material and device characterization 2006 Wiley-IEEE press
14. Mouis M, Ghibaudo G. Accurate determination of transport parameters in sub-65nm MOS transistors. In: Nanoscale CMOS: innovative materials, modeling and characterization, chapter 14, New York (USA): Wiley, 2010, ISBN: 978-1-84821-180-3.
15. D. Jang, J.W. Lee, C.W. Lee, J.P. Colinge, L. Montès, and J.I. Lee Low-frequency noise in junctionless multigate transistors Appl Phys Lett 98 2011 133502