Low-frequency noise performance of HfO2-based gate stacks

Journal of the Electrochemical Society

Volumn 152, Issue 9, 2005, Pages

  Claeys, C ^a,b   Simoen, E ^a   Mercha, A ^a   Pantisano, L ^a   Young, E ^a,c  

^a IMEC   (Belgium)

^b Katholieke Universiteit Leuven   (Belgium)

^c PHILIPS RESEARCH LABORATORIES   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; DIELECTRIC MATERIALS; METALLIC FILMS; PERMITTIVITY; SCATTERING;

ATOMIC LAYER DEPOSITION; GATE STACKS; LOW-FREQUENCY NOISE PERFORMANCE; THERMAL OXIDE REFERENCE;

HAFNIUM COMPOUNDS;

EID: 25644433410     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1984387     Document Type: Article

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