Evaluation of a gate-first process for AlGaN/GaN heterostructure field-effect transistors

Japanese Journal of Applied Physics

Volumn 52, Issue 11 PART 2, 2013, Pages

  Li, Liuan ^a   Kishi, Akinori ^a   Shiraishi, Takayuki ^a   Jiang, Ying ^a   Wang, Qingpeng ^a   Ao, Jin Ping ^a   Ohno, Yasuo ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; ANNEALING TEMPERATURES; DEVICE PERFORMANCE; GATE ELECTRODES; GATE RESISTANCE; GATE-LEAKAGE CURRENT; MAXIMUM DRAIN CURRENT; SCHOTTKY DIODES;

ELECTRIC PROPERTIES; GALLIUM NITRIDE; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES;

ANNEALING;

EID: 84889077938     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.7567/JJAP.52.11NH01     Document Type: Conference Paper

References (30)

1. S. Keller, Y.-F. Wu, G. Parish, N. Zhang, J. J. Xu, B. P. Keller, S. P. DenBaars, and U. K. Mishra: IEEE Trans. Electron Devices 48 (2001) 552.
2. U. K. Mishra, L. Shen, T. E. Kazior, and Y.-F. Wu: Proc. IEEE 96 (2008) 287.
3. T. Zimmermann, D. Deen, Y. Cao, J. Simon, P. Fay, D. Jena, and H. G. Xing: IEEE Electron Device Lett. 29 (2008) 661.
4. A. Podolska, M. Kocan, A. M. G. Cabezas, T. D. Wilson, G. A. Umana-Membreno, B. D. Nener, G. Parish, S. Keller, and U. K. Mishra: Appl. Phys. Lett. 97 (2010) 012108.
5. D. Wang, K. Wei, T. Yuan, and X. Liu: J. Semicond. 31 (2010) 034001.
6. V. Kumar, A. Basu, D.-H. Kim, and I. Adesida: Electron. Lett. 44 (2008) 1323.
7. H. Zhao, J. Huang, Y.-T. Chen, J. H. Yum, Y. Wang, F. Zhou, F. Xue, and J. C. Lee: Appl. Phys. Lett. 95 (2009) 253501.
8. D. J. Denninghoff, S. Dasgupta, J. Lu, S. Keller, and U. K. Mishra: IEEE Electron Device Lett. 33 (2012) 785.
9. F. Iucolano, F. Roccaforte, A. Alberti, C. Bongiorno, S. Di Franco, and V. Raineri: J. Appl. Phys. 100 (2006) 123706.
10. F. M. Mohammed, L. Wang, and I. Adesida: Appl. Phys. Lett. 88 (2006) 212107.
11. C.-T. Lee and H.-W. Kao: Appl. Phys. Lett. 76 (2000) 2364.
12. J.-P. Ao, N. Kubota, D. Kikuta, Y. Naoi, and Y. Ohno: Phys. Status Solidi C 0 (2003) 2376.
13. Z. Lin, H. Kim, J. Lee, and W. Lu: Appl. Phys. Lett. 84 (2004) 1585.
14. P.-C. Jiang, Y.-S. Lai, and J. S. Chen: J. Electrochem. Soc. 153 (2006) G572.
15. P. Ranade, H. Takeuchi, T.-J. King, and C. Hu: Electrochem. Solid-State Lett. 4 (2001) G85.
16. C. S. Kang, H.-J. Cho, Y. H. Kim, R. Choi, K. Onishi, A. Shahriar, and J. C. Lee: J. Vac. Sci. Technol. B 21 (2003) 2026.
17. H. Y. Yu, M.-F. Li, and D.-L. Kwong: IEEE Trans. Electron Devices 51 (2004) 609.
18. J. Würfl, J. Hilsenbeck, E. Nebauer, G. Tränkle, H. Obloh, and W. Österle: Microelectron. Reliab. 40 (2000) 1689.
19. J.-P. Ao, A. Suzuki, K. Sawada, S. Shinkai, Y. Naoi, and Y. Ohno: Vacuum 84 (2010) 1439.
20. J.-P. Ao, Y. Naoi, and Y. Ohno: Vacuum 87 (2013) 150.
21. A. Fontserè, A. Péres-Tomás, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J. C. Moreno, P. M. Gammon, M. R. Jennings, M. Porti, A. Bayerl, M. Lanza, and M. Nafría: Appl. Phys. Lett. 99 (2011) 213504.
22. M. Masakatsu, Y. Takao, and T. Yasuo: Trans. JWRI 41 (2012) 45.
23. E. Monroy, F. Calle, R. Ranchal, T. Palacios, M. Verdú, F. J. Sánchez, M. T. Montojo, M. Eickhoff, F. Omnès, Z. Bougrioua, and I. Moerman: Semicond. Sci. Technol. 17 (2002) L47.
24. W. Mtangi, P. J. J. van Rensburg, M. Diale, F. D. Auret, C. Nyamhere, J. M. Nel, and A. Chawanda: Mater. Sci. Eng. B 171 (2010) 1.
25. Y. Lv, Z. Lin, T. D. Corrigan, J. Zhao, Z. Cao, L. Meng, C. Luan, Z. Wang, and H. Chen: J. Appl. Phys. 109 (2011) 074512.
26. C. Ostermaier, G. Pozzovivo, B. Basnar, W. Schrenk, M. Schmid, L. Tóth, B. Pécz, J.-F. Carlin, M. Gonschorek, N. Grandjean, G. Strasser, D. Pogany, and J. Kuzmik: Appl. Phys. Lett. 96 (2010) 263515.
27. Y. Hao, C. Wang, J. Y. Ni, Q. Feng, J. C. Zhang, and W. Mao: Sci. China, Ser. E 51 (2008) 784.
28. C. Mizue, Y. Hori, M. Miczek, and T. Hashizume: Jpn. J. Appl. Phys. 50 (2011) 021001.
29. S. Sudharsanan and S. Karmalkar: J. Appl. Phys. 107 (2010) 064501.
30. S. Liu, J. Wang, R. Gong, S. Lin, Z. Dong, M. Yu, C. P. Wen, C. Zeng, Y. Cai, B. Zhang, F. Xu, J. Zhang, and B. Shen: Jpn. J. Appl. Phys. 50 (2011) 04DF10.