Enhanced device performance of AlGaN/GaN high electron mobility transistors with thermal oxidation treatment

Japanese Journal of Applied Physics

Volumn 50, Issue 4 PART 2, 2011, Pages

  Liu, Shenghou ^a   Wang, Jinyan ^a   Gong, Rumin ^a   Lin, Shuxun ^a   Dong, Zhihua ^a   Yu, Min ^a   Wen, C P ^a   Zeng, Chunhong ^a,b   Cai, Yong ^a,b   Zhang, Baoshun ^a,b   Xu, Fujun ^a   Zhang, Jincheng ^a,c   Shen, Bo ^a  

^a PEKING UNIVERSITY   (China)

^b SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS   (China)

^c XIDIAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; BREAKDOWN VOLTAGE; DEVICE PERFORMANCE; FOUR-ORDER; GATE-LEAKAGE CURRENT; MICROWAVE POWER AMPLIFIER; THERMAL OXIDATION; TRAP DENSITY;

DRAIN CURRENT; ELECTRON MOBILITY; GALLIUM NITRIDE; LEAKAGE CURRENTS; MICROWAVE AMPLIFIERS; OXIDATION; POWER AMPLIFIERS; RADAR SYSTEMS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79955436060     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.04DF10     Document Type: Article

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