Thermally stable TiN Schottky contact on AlGaN/GaN heterostructure

Vacuum

Volumn 87, Issue , 2013, Pages 150-154

  Ao, Jin Ping ^a   Naoi, Yoshiki ^a   Ohno, Yasuo ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

AlGaN GaN HFET; Gallium nitride; Reactive sputtering; Schottky contact; Self aligned gate; Titanium nitride

Indexed keywords

ALUMINUM GALLIUM NITRIDE; ELECTRIC FIELD EFFECTS; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; METALLIC FILMS; NITRIDES; REACTIVE SPUTTERING; SPUTTERING; THERMODYNAMIC STABILITY; TITANIUM; TITANIUM COMPOUNDS;

ALGAN/GAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; ALGAN/GAN HETEROSTRUCTURES; ALGAN/GAN HFETS; DC MAGNETRON SPUTTERING; ELECTRICAL PERFORMANCE; HIGH TEMPERATURE PROCESS; SCHOTTKY CONTACTS; SELF-ALIGNED GATE;

TITANIUM NITRIDE;

EID: 84888998386     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2012.02.038     Document Type: Article

References (18)

1. John D. Albrecht. Proc. The IEEE Compound Semiconductor IC Symp., Monterey, 2010.
2. R. Williams Moden GaAs processing methods 1990 Artech House Boston Chap.12, p.261
3. V. Kumar IEEE Electron Device Lett 29 2008 18
4. T. Nakayama Appl Phys Lett 85 2004 3775
5. T. Murata IEEE Trans Electron Devices 52 2005 1042
6. F. Mohammed Electronics Lett 41 2005 984
7. J.-P. Ao IEEE Electron Device Lett 24 2003 500
8. S.P. Murarka Murarka: Thin Solid Films 236 1993 257
9. J. Paraszczak Technical digest-international electron devices meeting 1993 p. 261
10. H. Itow Appl Phys Lett 63 1993 934
11. J.-P. Ao IEICE Trans Electron E86-C 2003 2051
12. J.-P. Ao Phys. Stat. Sol.(c) 0 2003 2376
13. N. Yokoyama IEDM 1981 80
14. J.-P. Ao Vacuum 84 2010 1439
15. C. Chen Appl Phys Lett 73 1998 3147
16. J. Lee Electronics Lett 40 2004 1227
17. K. Matocha Material Sci Forum 457-460 2004 1633
18. T. Nitta Appl Phys Lett 69 1996 340