Development and characteristic analysis of enhancement-mode recessed-gate AlGaN/GaN HEMT

Science in China, Series E: Technological Sciences

Volumn 51, Issue 6, 2008, Pages 784-789

  Hao, Yue ^a   Wang, Chong ^a   Ni, JinYu ^a   Feng, Qian ^a   Zhang, JinCheng ^a   Mao, Wei ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

AlGaN GaN; Enhacement mode high electron mobility transistors; Recessed gate; Threshold voltage

Indexed keywords

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; HETEROJUNCTIONS; LOGIC GATES; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

CHARACTERISTIC ANALYSIS; GATE LENGTH; RECESS DEPTH; RECESSED GATES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 43249104850     PISSN: 10069321     EISSN: 1862281X     Source Type: Journal    
DOI: 10.1007/s11431-008-0088-7     Document Type: Article

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