Effects of gate-first and gate-last process on interface quality of In 0.53 Ga0.47 As metal-oxide-semiconductor capacitors using atomic-layer-deposited Al2 O3 and HfO2 oxides

Applied Physics Letters

Volumn 95, Issue 25, 2009, Pages

  Zhao, Han ^a   Huang, Jeff ^b   Chen, Yen Ting ^a   Yum, Jung Hwan ^a   Wang, Yanzhen ^a   Zhou, Fei ^a   Xue, Fei ^a   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; FREQUENCY DISPERSION; GATE-LAST; INTERFACE QUALITY; INTERFACE REACTIONS; INTERFACE TRAP DENSITY; METAL-OXIDE-SEMICONDUCTOR CAPACITORS;

CAPACITANCE; CAPACITORS; HAFNIUM COMPOUNDS;

SEMICONDUCTING INDIUM;

EID: 73449130556     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3275001     Document Type: Article

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