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Volumn 99, Issue 21, 2011, Pages

Micro and nano analysis of 0.2 mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN

(14) Fontsere A a Perez Toms A a Placidi, M a Llobet, J a Baron, N b,c Chenot, S b Cordier, Y b Moreno, J C b Gammon, P M d Jennings, M R d Porti, M e Bayerl, A e Lanza, M e Nafria M e

a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA (Spain)

b CRHEA CNRS (France)

c Place Marcel Rebuffat ^* (France)

d UNIVERSITY OF WARWICK (United Kingdom)

e ETSE (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; CONDUCTION MECHANISM; CONTACT AREAS; CONTACT PROPERTIES; DIRECT PATHS; ELECTRON FLOW; GAN TECHNOLOGY; SUBMICRON; TI/AL/NI/AU;

ELECTRIC CONTACTORS; GALLIUM NITRIDE; OHMIC CONTACTS;

TWO DIMENSIONAL ELECTRON GAS;

EID: 81855213210 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3661167 Document Type: Article

Times cited : (50)

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