Thermal stability investigation of copper-gate AlGaN/GaN high electron mobility transistors

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2376-2379

  Ao, Jin Ping ^a   Kubota, Naotaka ^a   Kikuta, Daigo ^a   Naoi, Yoshiki ^a   Ohno, Yasuo ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; ALGAN/GAN HIGHELECTRON-MOBILITY TRANSISTORS (HEMTS); ANNEALING TEMPERATURES; CURRENT VOLTAGE; DEVICE PERFORMANCE; GATE-LEAKAGE CURRENT; SCHOTTKY CONTACTS;

ANNEALING; COPPER; GALLIUM NITRIDE; SECONDARY ION MASS SPECTROMETRY; THERMODYNAMIC STABILITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77954612114     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303350     Document Type: Conference Paper

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