Ion versus pH sensitivity of ungated AlGaN/GaN heterostructure-based devices

Applied Physics Letters

Volumn 97, Issue 1, 2010, Pages

  Podolska, Anna ^a   Kocan, Martin ^a   Cabezas, Alex M Garces ^a   Wilson, Timothy D ^a   Umana Membreno, Gilberto A ^a   Nener, Brett D ^a   Parish, Giacinta ^a   Keller, Stacia ^b   Mishra, Umesh K ^b  

^a UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN/GAN HETEROSTRUCTURES; DOUBLE LAYERS; ION CONCENTRATIONS; ION SENSITIVITIES; IONIC CONCENTRATIONS; PH SENSITIVITY;

ELECTRIC RESISTANCE; GALLIUM NITRIDE; NEGATIVE IONS; SODIUM CHLORIDE;

HYDROCHLORIC ACID;

EID: 77954698589     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3462323     Document Type: Article

References (13)

1. M. Stutzmann, G. Steinhoff, M. Eickhoff, and O. Ambacher, Diamond Relat. Mater. DRMTE3 0925-9635 11, 886 (2002). 10.1016/S0925-9635(02)00026-2
2. O. Ambacher, J. Smart, and J. R. Shealy, J. Appl. Phys. JAPIAU 0021-8979 31, 2653 (1998).
3. S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Ren, J. Appl. Phys. JAPIAU 0021-8979 86, 1 (1999). 10.1063/1.371145
4. S. C. Jain, M. Willander, J. Narayan, and R. V. Overstraeten, J. Appl. Phys. JAPIAU 0021-8979 87, 965 (2000). 10.1063/1.371971
5. G. Steinhoff, M. Hermann, W. J. Schaff, L. F. Eastman, M. Stutzmann, and M. Eickhoff, Appl. Phys. Lett. APPLAB 0003-6951 83, 177 (2003). 10.1063/1.1589188
6. B. S. Kang, S. Kim, R. Mehandru, F. Ren, K. Baik, and S. J. Pearton, Phys. Status Solidi PHSSAK 0031-8957 7, 2684 (2005).
7. M. Eickhoff, J. Schalwig, G. Steinhoff, O. Weidemann, and L. Goergens, Phys. Status Solidi PHSSAK 0031-8957 6, 1908 (2003).
8. M. Bayer, C. Uhl, and P. Vogl, J. Appl. Phys. JAPIAU 0021-8979 97, 033703 (2005). 10.1063/1.1847730
9. H. Helmholtz, Ann. Phys. ANPYA2 0003-3804 LXXXIX, 211 (1853).
10. A. Rizzi, M. Kocan, J. Malindretos, A. Schildknecht, A. Teofilov, K. Thonke, and R. Sauer, Appl. Phys. A: Mater. Sci. Process. APAMFC 0947-8396 87, 505 (2007). 10.1007/s00339-007-3873-4
11. J. P. Ibbertson, P. T. Fini, K. D. Ness, S. P. DenBaars, J. s. Speck, and U. K. Mishra, Appl. Phys. Lett. APPLAB 0003-6951 77, 2 (2000).
12. N. A. Chaniotakis, Y. Alifragis, A. Georgakilas, and G. Konstantinidis, Appl. Phys. Lett. APPLAB 0003-6951 86, 164103 (2005). 10.1063/1.1896449
13. G. Gouy, Comt. Rend. 149, 654 (1909) G. Gouy, [J. Phys. 9, 457 (1910)].