Schottky contacts of refractory metal nitrides on gallium nitride using reactive sputtering

Vacuum

Volumn 84, Issue 12, 2010, Pages 1439-1443

  Ao, Jin Ping ^a   Suzuki, Asato ^a   Sawada, Kouichi ^a   Shinkai, Satoko ^b   Naoi, Yoshiki ^a   Ohno, Yasuo ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

^b KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Gallium nitride; Reactive sputtering; Refractory metal nitride; Schottky contact; Schottky diode

Indexed keywords

GALLIUM NITRIDE; METALS; NITRIDES; REACTIVE SPUTTERING; REFRACTORY MATERIALS; REFRACTORY METAL COMPOUNDS; REFRACTORY METALS; SCHOTTKY BARRIER DIODES; SPUTTERING; THERMODYNAMIC STABILITY;

FILM RESISTIVITY; GALLIUM NITRIDES (GAN); IDEALITY FACTORS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CHARACTERISTICS; SCHOTTKY CONTACTS; SCHOTTKY DIODES; THERMALLY STABLE;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 77956451399     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2009.12.006     Document Type: Conference Paper

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