Influence of nitrogen content in W N x on its thermal stability and electrical property as a gate electrode

Journal of the Electrochemical Society

Volumn 153, Issue 6, 2006, Pages

  Jiang, Pei Chuen ^a   Lai, Yi Sheng ^a,b   Chen, J S ^a,b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b ELECTROCHEMICAL SOCIETY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

NITROGEN CONCENTRATION; REACTIVE RADIO FREQUENCY SPUTTERING; W NX FILMS; W-N BONDING;

CHEMICAL BONDS; ELECTROCHEMICAL ELECTRODES; GATES (TRANSISTOR); LEAKAGE CURRENTS; MOS CAPACITORS; NITROGEN; SPUTTERING; THERMODYNAMIC STABILITY; TUNGSTEN COMPOUNDS;

THIN FILMS;

EID: 33646394335     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2192734     Document Type: Article

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