Self-aligned AlGaN/GaN high electron mobility transistors with 0.18m gate-length

Electronics Letters

Volumn 44, Issue 22, 2008, Pages 1323-1325

  Kumar, V ^a   Basu, A ^a   Kim, D H ^a   Adesida, I ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CUTOFF FREQUENCY; DRAIN CURRENT; ELECTRIC CONTACTORS; ELECTRON MOBILITY; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; OHMIC CONTACTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE;

ACCESS RESISTANCES; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; ANNEALING TEMPERATURES; DRAIN BIASSED; GAIN CUTOFF FREQUENCIES; GATE BIASES; KNEE VOLTAGES; MAXIMUM DRAIN CURRENT DENSITIES; PEAK EXTRINSIC TRANSCONDUCTANCES; POWER GAIN FREQUENCIES; SCALING; SELF-ALIGNED; SIC SUBSTRATES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 54849427322     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20082040     Document Type: Article

References (11)

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