Ultralow resistance Si-containing Ti/Al/Mo/Au Ohmic contacts with large processing window for AlGaNGaN heterostructures

Applied Physics Letters

Volumn 88, Issue 21, 2006, Pages

  Mohammed, Fitih M ^a   Wang, Liang ^a   Adesida, Ilesanmi ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGANGAN HETEROSTRUCTURES; CONTACT RESISTANCE; SPECIFIC CONTACT RESISTIVITY; TIALMOAU CONTACTS;

ALUMINUM COMPOUNDS; ANNEALING; ELECTRIC CONDUCTIVITY; METALLIZING; MICROSTRUCTURE; OHMIC CONTACTS;

HETEROJUNCTIONS;

EID: 33744539904     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2206127     Document Type: Article

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