Analysis of current-voltage measurements on Au/Ni/n-GaN Schottky contacts in a wide temperature range

Materials Science and Engineering: B

Volumn 171, Issue 1-3, 2010, Pages 1-4

  Mtangi, W ^a   van Rensburg, P J Janse ^a   Diale, M ^a   Auret, F D ^a   Nyamhere, C ^a   Nel, J M ^a   Chawanda, A ^a  

^a UNIVERSITY OF PRETORIA   (South Africa)

Author keywords

GaN Schottky contacts; Schottky barrier height; Temperature dependence; Thermionic field emission

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; FIELD EMISSION; GOLD COMPOUNDS; III-V SEMICONDUCTORS; NICKEL; SCHOTTKY BARRIER DIODES; TEMPERATURE DISTRIBUTION; THERMIONIC EMISSION;

BARRIER HEIGHTS; CURRENT-VOLTAGE MEASUREMENTS; GAN SCHOTTKY CONTACT; IDEALITY FACTORS; SCHOTTKY CONTACTS; SCHOTTKY-BARRIER HEIGHTS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE; THERMIONIC FIELD EMISSION; WIDE TEMPERATURE RANGES;

GALLIUM NITRIDE;

EID: 77953135591     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2010.03.044     Document Type: Article

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