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Volumn 109, Issue 7, 2011, Pages

Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics

(9) Lv, Yuanjie a Lin, Zhaojun a Corrigan, Timothy D b Zhao, Jianzhi a Cao, Zhifang a Meng, Lingguo a Luan, Chongbiao a Wang, Zhanguo c Chen, Hong d

a SHANDONG UNIVERSITY (China)

b University of Maryland (United States)

c INSTITUTE OF SEMICONDUCTORS (China)

d INSTITUTE OF PHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HETEROSTRUCTURES; BARRIER HEIGHTS; FORWARD CURRENTS; INTERNAL PHOTOEMISSION; IV CHARACTERISTICS; MEASURED RESULTS; POISSON'S EQUATION; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS; SCHOTTKY DIODES; TWO-DIODE MODEL; ZERO BIAS;

BIAS VOLTAGE; CRYSTALS; ELECTRIC FIELDS; GALLIUM NITRIDE; HETEROJUNCTIONS; POISSON EQUATION; SCHOTTKY BARRIER DIODES; SCHRODINGER EQUATION; SEMICONDUCTOR METAL BOUNDARIES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 79955457033 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3569594 Document Type: Conference Paper

Times cited : (66)

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