Phosphorous passivation of the SiO 2/4H-SiC interface

Solid-State Electronics

Volumn 68, Issue , 2012, Pages 103-107

  Sharma, Y K ^a   Ahyi, A C ^a   Issacs Smith, T ^a   Shen, X ^b   Pantelides, S T ^b   Zhu, X ^c   Feldman, L C ^c,d   Rozen, J ^e   Williams, J R ^a  

^a AUBURN UNIVERSITY   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c RUTGERS UNIVERSITY   (United States)

^d VANDERBILT UNIVERSITY   (United States)

^e IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Channel mobility; Interface trap density; Phosphorous; Threshold voltage stability

Indexed keywords

BIAS-TEMPERATURE STRESS; CARBON ATOMS; CHANNEL MOBILITY; CURRENT VOLTAGE; EFFECTIVE MOBILITIES; IMPURITY BANDS; INTERFACE DEFECTS; INTERFACE TRAP DENSITY; MOS-FET; PHOSPHOROUS; PHOSPHOSILICATE GLASS; POLAR MATERIALS; POLARIZATION CHARGES; THEORETICAL STUDY; TRAP DENSITY;

DANGLING BONDS; DEFECT DENSITY; MOS CAPACITORS; NITRIC OXIDE; PASSIVATION; PHOSPHORUS; SILICON CARBIDE; SODIUM; THRESHOLD VOLTAGE;

INTERFACES (MATERIALS);

EID: 84655162022     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.10.030     Document Type: Article

References (29)

1. < www.cree.com/products/sic-sub-prop.asp >.
2. B.J. Baliga IEEE Trans Electron Dev 43 10 1996 1717
3. F. Ren, and J.C. Zolper Wide energy band gap electronics devices 2003 World Scientific Publishing New Jersey
4. R. Schorner, P. Federichs, D. Peters, and D. Stephani IEEE Trans Electron Dev 20 1999 241
5. S. Dhar, S. Wang, J.R. Williams, S.T. Pantelides, and L.C. Feldman MRS Bull 33 2005 288
6. G. Chung, C.C. Tin, J.R. Williams, K. McDonald, R.A. Weller, and M. Di Ventra Appl Phys Lett 76 13 2000 1713
7. P. Jamet, S. Dimitrijev, and P. Tanner J Appl Phys 90 10 2001 5058
8. S. Wang, S. Dhar, S.R. Wang, A.C. Ahyi, A. Franceschetti, and J.R. Williams Phys Rev Lett 98 2007 026101
9. V.V. Afanas'ev Microelectron Eng 48 1999 241
10. V.V. Afanas'ev, A. Stesmans, F. Ciobanu, G. Pensl, K.Y. Cheong, and S. Dimitrijev Appl Phys Lett 82 4 2003 568
11. E.O. Sveinbjornsson, G. Gudjonsson, F. Allerstam, H.O. Olafsson, P.A. Nilsson, and H. Zirathm Materials Sci Forum 961 2006 527 529
12. Y.V. Gulyaev, A.G. Zhdan, and G.V. Chucheva Semiconductors 41 3 2007 357
13. H. Yano, T. Hirao, T. Kimoto, H. Matsunami, K. Asano, and Y. Sugawara IEEE Electron Dev Lett 20 12 1999 613
14. T. Hatayama, S. Hino, N. Miura, T. Oomori, and E. Tokumitsu IEEE Trans Electron Dev 55 8 2008 2041
15. D. Okamato, H. Yano, T. Hatayama, and T. Fuyuki IEEE Electron Dev Lett 31 7 2010 710
16. A.J. Lelis, D. Habersat, R. Green, and N. Goldsman Mater Sci Forum 600-603 2009 807
17. E.H. Snow, and B.E. Deal J Electrochem Soc 113 3 1966 263
18. E.H. Snow, and M.E. Dumesil J Appl Phys 39 1966 2123
19. S.K. Dixit, S. Dhar, J. Rozen, S. Wang, R.D. Schrimpf, and D.M. Fleetwood IEEE Tran Electron Dev 53 2006 3687
20. J. Rozen, S. Dhar, S.K. Dixit, V.V. Afanas'ev, F.O. Roberts, and H.L. Dang J Appl Phys 103 2008 124513
21. D. Okamoto, H. Yano, S. Kotake, T. Hatayama, and T. Fuyuki Mater Sci Forum 679 2011 338
22. A. Nakahira, K. Konishi, K. Yokota, T. Honma, H. Aritani, and K. Tanaka J Ceram Soc Jpn 114 2006 46
23. A.-M. Goncalves, O. Seitz, C. Mathieu, M. Herlem, and A. Etcheberry Electrochem Commun 10 2008 225
24. C.C. Tin, S. Mendis, K. Chew, I. Atabaev, T. Saliev, and E. Bakhranov Thin Solid Films 518 24 2010 e118 Supplement 1
25. Charles Evans Associates, private communication.
26. X. Shen, and S.T. Pantelides Appl Phys Lett 98 2011 053507
27. Y. Liu, M.R. Halfmoon, C.A. Rittenhouse, and S. Wang Appl Phys Lett 97 2010 242111
28. S. Dhar, S.-H. Ryu, and A.K. Agarwal IEEE Trans Electron Dev 57 2010 1195
29. B.R. Tuttle, S. Dhar, S.-H. Ryu, X. Zhu, J.R. Williams, and L.C. Feldman J Appl Phys 109 2011 023702