High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation

Journal of Applied Physics

Volumn 114, Issue 15, 2013, Pages

  Nguyen, Van Huy ^a   Dobbie, A ^a   Myronov, M ^a   Leadley, D R ^a  

^a UNIVERSITY OF WARWICK   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRAIN; HIGH-TEMPERATURE GROWTH; LOW TEMPERATURES; REDUCED PRESSURE-CHEMICAL VAPOUR DEPOSITION; SI SUBSTRATES; SILICON SUBSTRATES; TEMPERATURE GROWTH; THREADING DISLOCATION DENSITIES;

CHEMICAL VAPOR DEPOSITION; ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; SILICON; STACKING FAULTS;

GERMANIUM;

EID: 84886539432     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4825130     Document Type: Article

References (34)

1. D. Kuzum, A. J. Pethe, T. Krishnamohan, and K. C. Saraswat, IEEE Trans. Electron Devices 56 (4), 648-655 (2009). 10.1109/TED.2009.2014198
2. S. Maikap, M. H. Lee, S. T. Chang, and C. W. Liu, Semicond. Sci. Technol. 22 (4), 342-347 (2007). 10.1088/0268-1242/22/4/008
3. C. O. Chui, H. Kim, D. Chi, B. B. Triplett, P. C. McIntyre, and K. C. Saraswat, IEDM Tech. Dig. 4 (2002).
4. T. Low, M. F. Li, C. Shen, Y. C. Yeo, Y. T. Hou, C. X. Zhu, A. Chin, and D. L. Kwong, Appl. Phys. Lett. 85 (12), 2402-2404 (2004). 10.1063/1.1788888
5. C. H. Lee, T. Nishimura, T. Tabata, S. K. Wang, K. Nagashio, K. Kita, and A. Toriumi, IEDM Tech. Dig. 18.11.11 (2012).
6. V. H. Nguyen, A. Dobbie, M. Myronov, D. J. Norris, T. Walther, and D. R. Leadley, Thin Solid Films 520, 3222-3226 (2012). 10.1016/j.tsf.2011.10.099
7. L. Colace, G. Masini, F. Galluzzi, G. Assanto, G. Capellini, L. D. Gaspare, E. Palange, and F. Evangelisti, Appl. Phys. Lett. 72 (24), 3175-3177 (1998). 10.1063/1.121584
8. V. Destefanis, J. Hartmann, A. Abbadie, A. M. Papon, and T. Billon, J. Cryst. Growth 311 (4), 1070-1079 (2009). 10.1016/j.jcrysgro.2008.12.034
9. M. L. Lee, D. A. Antoniadis, and E. A. Fitzgerald, Thin Solid Films 508 (1-2), 136-139 (2006). 10.1016/j.tsf.2005.07.328
10. J. M. Hartmann, A. M. Papon, V. Destefanis, and T. Billon, J. Cryst. Growth 310, 5287-5296 (2008). 10.1016/j.jcrysgro.2008.08.062
11. V. A. Shah, A. Dobbie, M. Myronov, and D. R. Leadley, Thin Solid Films 519 (22), 7911-7917 (2011). 10.1016/j.tsf.2011.06.022
12. T. F. Wietler, E. Bugiel, and K. R. Hofmann, Thin Solid Films 517, 272-274 (2008). 10.1016/j.tsf.2008.08.018
13. J. S. Park, M. Curtin, J. M. Hydrick, J. Bai, J.-T. Li, Z. Cheng, M. Carroll, J. G. Fiorenza, and A. Lochtefeld, Electrochem. Solid State Lett. 12 (4), H142-H144 (2009). 10.1149/1.3077178
14. V. Destefanis, J. M. Hartmann, L. Baud, and T. Billon, J. Cryst. Growth 312 (7), 918-925 (2010). 10.1016/j.jcrysgro.2010.01.003
15. A. Usui, Jpn. J. Appl. Phys., Part 2 36 (7 B), L899-L902 (1997). 10.1143/JJAP.36.L899
16. A. Dobbie, V. H. Nguyen, M. Myronov, T. Whall, E. H. C. Parker, and D. R. Leadley, Appl. Phys. Express 5, 071301 (2012). 10.1143/APEX.5.071301
17. G. Capellini, M. D. Seta, Y. Busby, M. Pea, F. Evangelisti, G. Nicotra, C. Spinella, M. Nardone, and C. Ferrari, J. Appl. Phys. 107 (6), 063504 (2010). 10.1063/1.3327435
18. F. K. LeGoues, M. Hornvonhoegen, M. Copel, and R. M. Tromp, Phys. Rev. B 44 (23), 12894-12902 (1991). 10.1103/PhysRevB.44.12894
19. Y. Ishikawa, K. Wada, J. F. Liu, D. D. Cannon, H. C. Luan, J. Michel, and L. C. Kimerling, J. Appl. Phys. 98 (1), 013501 (2005). 10.1063/1.1943507
20. M. Horn-von Hoegen, F. Heringdorf, M. Kammler, C. Schaeffer, D. Reinking, and K. R. Hofmann, Thin Solid Films. 343-344, 579-582 (1999). 10.1016/S0040-6090(98)01659-9
21. A. Elfving, M. Zhao, G. V. Hansson, and W. X. Ni, Appl. Phys. Lett. 89 (18), 181901 (2006). 10.1063/1.2364861
22. K. Arimoto, M. Watanabe, J. Yamanaka, N. Usami, K. Nakajima, K. Sawano, and Y. Shiraki, J. Cryst. Growth 311 (3), 819-824 (2009). 10.1016/j.jcrysgro. 2008.09.064
23. I. Kovačević, B. Pivac, P. Dubcek, H. Zorc, N. Radic, S. Bernstorff, M. Campione, and A. Sassella, Appl. Surf. Sci. 253 (6), 3034-3040 (2007). 10.1016/j.apsusc.2006.06.048
24. C. Tetelin, X. Wallart, D. Stievenard, J. P. Nys, and D. J. Gravestejin, J. Vac. Sci. Technol. B 16 (1), 137-141 (1998). 10.1116/1.589768
25. A. Riposan, G. K. M. Martin, and J. M. Millunchick, Appl. Phys. Lett. 83 (22), 4518-4520 (2003). 10.1063/1.1631053
26. A. Dobbie, V. H. Nguyen, R. J. H. Morris, X. -C. Liu, M. Myronov, and D. R. Leadley, J. Electrochem. Soc. 159 (5), H490-H496 (2012). 10.1149/2.063205jes
27. D. E. Jesson, K. M. Chen, S. J. Pennycook, T. Thundat, and R. J. Warmack, Phys. Rev. Lett. 77 (7), 1330-1333 (1996). 10.1103/PhysRevLett.77.1330
28. L. Vescan, K. Grimm, and C. Dieker, J. Vac. Sci. Technol. B 16, 1549 (1998). 10.1116/1.589937
29. S. A. Chaparro, Y. Zhang, and J. Drucker, Appl. Phys. Lett. 76 (24), 3534-3536 (2000). 10.1063/1.126698
30. U. Denker, O. G. Schmidt, N.-Y. Jin-Philipp, and K. Eberl, Appl. Phys. Lett. 78 (23), 3723-3725 (2001). 10.1063/1.1378049
31. E. Sutter, P. Sutter, and J. E. Bernard, Appl. Phys. Lett. 84 (13), 2262-2264 (2004). 10.1063/1.1669068
32. F. Fossard, M. Halbwax, V. Yam, H. L. Nguyen, V. Mather, D. Cammilleri, D. Bebarre, J. Boulmer, and D. Bouchier, ECS Trans. 3 (7), 593-598 (2006). 10.1149/1.2355856
33. T. F. Wietler, A. Ott, E. Bugiel, and K. R. Hofmann, Mater. Sci. Semicond. Process. 8 (1-3), 73-77 (2005). 10.1016/j.mssp.2004.09.077
34. R. Hull, J. C. Bean, L. Peticolas, and D. Bahnck, Appl. Phys. Lett. 59, 964 (1991). 10.1063/1.106316