Epitaxial growth of relaxed germanium layers by reduced pressure chemical vapour deposition on (110) and (111) silicon substrates

Thin Solid Films

Volumn 520, Issue 8, 2012, Pages 3222-3226

  Nguyen, Van Huy ^a   Dobbie, A ^a   Myronov, M ^a   Norris, D J ^b   Walther, T ^b   Leadley, D R ^a  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

(110); (111); Chemical vapour deposition; Epitaxy; Germanium; Silicon; Stacking fault formation

Indexed keywords

(110); (111); CHEMICAL VAPOUR DEPOSITION; COMPLEMENTARY METAL OXIDE SEMICONDUCTOR TRANSISTOR; HIGH DENSITY; HIGH TEMPERATURE; POSTGROWTH ANNEALING; REDUCED PRESSURE-CHEMICAL VAPOUR DEPOSITION; SEED LAYER; SI SUBSTRATES; SILICON SUBSTRATES; THREADING DISLOCATION; THREADING DISLOCATION DENSITIES; TWO-TEMPERATURE;

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; SILICON; STACKING FAULTS; SURFACE ROUGHNESS;

GERMANIUM;

EID: 84857041092     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.10.099     Document Type: Conference Paper

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