Growth of smooth, low-defect germanium layers on (111) silicon via an intermediate islanding process

Applied Physics Express

Volumn 5, Issue 7, 2012, Pages

  Dobbie, Andy ^a   Nguyen, Van Huy ^a   Myronov, Maksym ^a   Whall, Terry E ^a   Parker, Evan H C ^a   Leadley, David R ^a  

^a UNIVERSITY OF WARWICK   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRAIN; HIGH MOBILITY; ISLANDING; N-CHANNEL TRANSISTORS; SEED LAYER; SI SUBSTRATES; SMOOTH LAYER; THREADING DISLOCATION DENSITIES; TOP SURFACE;

ELECTRIC POWER DISTRIBUTION; EPITAXIAL GROWTH; SURFACE ROUGHNESS;

GERMANIUM;

EID: 84863759423     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.5.071301     Document Type: Article

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