Step instability and island formation during annealing of pseudomorphic InGaAs/GaAs layers

Applied Physics Letters

Volumn 83, Issue 22, 2003, Pages 4518-4520

  Riposan, A ^a   Martin, G K M ^a   Millunchick, J Mirecki ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; INTERFACIAL ENERGY; MOLECULAR BEAM EPITAXY; MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING FILMS; STRAIN; SURFACE ROUGHNESS; X RAY PHOTOELECTRON SPECTROSCOPY;

BEAM EQUIVALENT PRESSURE; MORPHOLOGICAL STABILITY; PSEUDOMORPHIC LAYERS;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0348107245     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1631053     Document Type: Article

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