Strain-induced enhancement of near-infrared absorption in Ge epitaxial layers grown on Si substrate

Journal of Applied Physics

Volumn 98, Issue 1, 2005, Pages

  Ishikawa, Yasuhiko ^a,b   Wada, Kazumi ^a,c   Liu, Jifeng ^a   Cannon, Douglas D ^a   Luan, Hsin Chiao ^a   Michel, Jurgen ^a   Kimerling, Lionel C ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b SHIZUOKA UNIVERSITY   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL LAYERS; NEAR-INFRARED ABSORPTION; NEAR-INFRARED LIGHT; STRAIN-INDUCED ENHANCEMENT;

BAND STRUCTURE; EPITAXIAL GROWTH; INFRARED RADIATION; LATTICE CONSTANTS; LIGHT ABSORPTION; SILICON; STRAIN; SUBSTRATES; THERMAL EXPANSION; WAVELENGTH DIVISION MULTIPLEXING; X RAY DIFFRACTION ANALYSIS;

GERMANIUM;

EID: 22944463353     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1943507     Document Type: Article

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