SCOPUS 정보 검색 플랫폼

Volumn 519, Issue 22, 2011, Pages 7911-7917

Effect of layer thickness on structural quality of Ge epilayers grown directly on Si(001)

(4) Shah, V A a Dobbie, A a Myronov, M a Leadley, D R a

a UNIVERSITY OF WARWICK (United Kingdom)

Author keywords

Chemical vapor deposition; Germanium; Growth kinetics; Relaxation; Silicon; Surface roughness; Tensile strain; Threading dislocations

Indexed keywords

DEGREE OF RELAXATION; GE EPILAYER; HIGH TEMPERATURE; LAYER METHOD; LAYER THICKNESS; LOW TEMPERATURES; REDUCED PRESSURE CHEMICAL VAPOR DEPOSITION; RELAXATION; SEED LAYER; SI (001) SUBSTRATE; SI(0 0 1); STRUCTURAL QUALITIES; THREADING DISLOCATION DENSITIES; THREADING-DISLOCATIONS; TWO-TEMPERATURE;

CHEMICAL VAPOR DEPOSITION; EPILAYERS; EPITAXIAL GROWTH; MAGNETIC ANISOTROPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SURFACE PROPERTIES; SURFACE ROUGHNESS; SURFACE STRUCTURE; TENSILE STRAIN;

GERMANIUM;

EID: 80052111304 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2011.06.022 Document Type: Article

Times cited : (45)

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