Growth and structural properties of SiGe virtual substrates on Si(1 0 0), (1 1 0) and (1 1 1)

Journal of Crystal Growth

Volumn 311, Issue 4, 2009, Pages 1070-1079

  Destefanis, V ^a   Hartmann, J M ^b   Abbadie, A ^b   Papon, A M ^b   Billon, T ^b  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

Author keywords

A1. Crystal morphology; A1. Defects; A1. Substrates; A1. Surface structure; A3. Chemical vapor deposition processes; B1. Germanium silicon alloys

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DISLOCATIONS (CRYSTALS); GERMANIUM; GERMANIUM ALLOYS; GROWTH KINETICS; HATCHES; MORPHOLOGY; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON; STACKING FAULTS; STRUCTURAL PROPERTIES; SUBSTRATES; SURFACE DEFECTS; SURFACE STRUCTURE; VAPORS; X RAY DIFFRACTION;

A1. CRYSTAL MORPHOLOGY; A1. DEFECTS; A1. SUBSTRATES; A1. SURFACE STRUCTURE; A3. CHEMICAL VAPOR DEPOSITION PROCESSES; B1. GERMANIUM SILICON ALLOYS;

SILICON ALLOYS;

EID: 60649090782     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.12.034     Document Type: Article

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