Bi surfactant mediated epitaxy of Ge on Si(111)

Thin Solid Films

Volumn 343-344, Issue 1-2, 1999, Pages 579-582

  Horn von Hoegen, M ^a   Meyer Zu Heringdorf, F J ^a   Kammler, M ^a   Schaeffer, C ^a   Reinking, D ^a   Hofmann, K R ^b  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^b NONE

Author keywords

Bismuth; Doping; Germanium; Hall mobility; Heteruepitaxial growth; Low energy electron diffraction; Molecular beam epitaxy; Scanning electron microscopy; Silicon; Surfactants

Indexed keywords

BINDING ENERGY; BISMUTH; CARRIER MOBILITY; CRYSTAL LATTICES; DESORPTION; DISLOCATIONS (CRYSTALS); HALL EFFECT; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SURFACE ACTIVE AGENTS;

HALL MOBILITY; LATTICE MISMATCH;

HETEROJUNCTIONS;

EID: 0343998604     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01659-9     Document Type: Article

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