Selective epitaxial growth of Ge(1 1 0) in trenches using the aspect ratio trapping technique

Journal of Crystal Growth

Volumn 312, Issue 7, 2010, Pages 918-925

  Destefanis, V ^a   Hartmann, J M ^b   Baud, L ^b   Delaye, V ^b   Billon, T ^b  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

Author keywords

A1. Defects; A1. Stresses; A1. Surface structure; A3. Chemical vapor deposition processes; B2. Semiconducting germanium

Indexed keywords

A1. DEFECTS; A1. STRESSES; A3. CHEMICAL VAPOR DEPOSITION PROCESSES; B2. SEMICONDUCTING GERMANIUM; CHEMICAL VAPOR DEPOSITION PROCESS;

ASPECT RATIO; CHEMICAL MECHANICAL POLISHING; CHEMICAL POLISHING; CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; PRESSURE DROP; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON; SILICON WAFERS; SURFACE DEFECTS; SURFACE MORPHOLOGY;

DEFECT DENSITY;

EID: 77249116748     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.01.003     Document Type: Article

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