Advances in surfactant-mediated growth of germanium on silicon: High-quality p-type Ge films on Si

Materials Science in Semiconductor Processing

Volumn 8, Issue 1-3 SPEC. ISS., 2005, Pages 73-77

  Wietler, Tobias F ^a   Ott, André ^a   Bugiel, Eberhard ^a   Hofmann, Karl R ^a  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

Boron; Dislocation array; Germanium; p Doping; Silicon; Surfactant mediated epitaxy

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; BORON; DISLOCATIONS (CRYSTALS); FILM GROWTH; HOLE MOBILITY; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DOPING; SURFACE ACTIVE AGENTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY (XTEM); DISLOCATION ARRAYS; P-DOPING; SURFACTANT MEDIATED EPITAXY (SME);

SEMICONDUCTING FILMS;

EID: 13244267302     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.09.077     Document Type: Conference Paper

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