Strain relaxation mechanisms in step-graded SiGe/Si(1 1 0) heterostructures grown by gas-source MBE at high temperatures

Journal of Crystal Growth

Volumn 311, Issue 3, 2009, Pages 819-824

  Arimoto, Keisuke ^a   Watanabe, Masato ^a   Yamanaka, Junji ^a   Nakagawa, Kiyokazu ^a   Usami, Noritaka ^b   Nakajima, Kazuo ^b   Sawano, Kentarou ^c   Shiraki, Yasuhiro ^c  

^a UNIVERSITY OF YAMANASHI   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c TOKYO CITY UNIVERSITY   (Japan)

Author keywords

A1. Planar defects; A3. Molecular beam epitaxy; B2. Semiconducting Si compounds

Indexed keywords

CRYSTAL GROWTH; DEFECTS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; SILICON; STRAIN CONTROL; STRAIN RELAXATION; SUBSTRATES;

A1. PLANAR DEFECTS; A3. MOLECULAR BEAM EPITAXY; B2. SEMICONDUCTING SI COMPOUNDS; DEFECT MORPHOLOGIES; DISLOCATION GENERATIONS; GAS SOURCES; HETEROSTRUCTURES; HIGH TEMPERATURES; MICROTWIN; SI-GE FILMS; SIGE/SI; STRAIN RELAXATION MECHANISMS; SUBSTRATE TEMPERATURES; TEMPERATURE DEPENDENCES; UNIFORM LAYERS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 59749100279     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.09.064     Document Type: Article

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