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Volumn 517, Issue 1, 2008, Pages 272-274

Relaxed germanium films on silicon (110)

Author keywords

Germanium; Growth mechanism; Molecular beam epitaxy (MBE); Silicon

Indexed keywords

CRYSTAL GROWTH; EPITAXIAL GROWTH; GERMANIUM; LATTICE MISMATCH; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SILICON; STACKING FAULTS; SUBSTRATES; SURFACE ACTIVE AGENTS; TENSILE STRAIN;

EID: 54849405498     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.08.018     Document Type: Article
Times cited : (9)

References (20)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.