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Volumn 517, Issue 1, 2008, Pages 272-274
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Relaxed germanium films on silicon (110)
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Author keywords
Germanium; Growth mechanism; Molecular beam epitaxy (MBE); Silicon
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Indexed keywords
CRYSTAL GROWTH;
EPITAXIAL GROWTH;
GERMANIUM;
LATTICE MISMATCH;
MOLECULAR BEAMS;
MOLECULAR DYNAMICS;
SILICON;
STACKING FAULTS;
SUBSTRATES;
SURFACE ACTIVE AGENTS;
TENSILE STRAIN;
DIRECT GROWTHS;
GERMANIUM FILMS;
GROWTH MECHANISM;
LATTICE MISMATCHED;
MOLECULAR BEAM EPITAXY (MBE);
ROUGH GROWTHS;
SI(100);
SI(110);
SI(111);
STRAIN RELEASES;
SUBSTRATE TEMPERATURES;
THERMAL MISMATCHES;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 54849405498
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2008.08.018 Document Type: Article |
Times cited : (9)
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References (20)
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