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Volumn 107, Issue 6, 2010, Pages

Strain relaxation in high Ge content SiGe layers deposited on Si

(9) Capellini, G a De Seta, M a Busby, Y a Pea, M a Evangelisti, F a Nicotra, G b Spinella, C b Nardone, M b Ferrari, C c

a ROMA TRE UNIVERSITY (Italy)

b CNR (Italy)

c IMEM CNR (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRAIN; GE CONTENT; HETERO INTERFACES; HETEROEPITAXIAL LAYERS; MISFIT DISLOCATIONS; PURE EDGE; SI SUBSTRATES; SI-GE ALLOYS; SIGE LAYERS; STRAIN RELAXATION MECHANISM; VIRTUAL SUBSTRATES; X RAY PHOTOEMISSION SPECTROSCOPY;

EDGE DISLOCATIONS; EMISSION SPECTROSCOPY; GERMANIUM; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR QUANTUM DOTS; SILICON; STRAIN CONTROL; STRAIN RELAXATION; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

SILICON ALLOYS;

EID: 77950571308 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3327435 Document Type: Conference Paper

Times cited : (75)

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