Formation of Ge islands from a Ge layer on Si substrate during post-growth annealing

Applied Surface Science

Volumn 253, Issue 6, 2007, Pages 3034-3040

  Kovacevic I ^a   Pivac, B ^a   Dubcek P ^a   Zorc, H ^a   Radic N ^a   Bernstorff, S ^b   Campione, M ^c   Sassella, A ^c  

^a RUDER BO KOVI INSTITUTE   (Croatia)

^b SINCROTRONE TRIESTE   (Italy)

^c UNIVERSITY OF MILANO BICOCCA   (Italy)

Author keywords

Atomic force microscopy; Ge islands; Ge nanostructures; X ray reflectivity

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; GERMANIUM; NANOSTRUCTURED MATERIALS; SILICON; SUBSTRATES;

GRAZING INCIDENCE SMALL-ANGLE X-RAY SCATTERING (GISAXS); POST GROWTH ANNEALING; X-RAY REFLECTIVITY;

LAYERED MANUFACTURING;

EID: 33845773432     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.06.048     Document Type: Article

References (19)

1. Konle J., Presting H., and Kibbel H. Physics E 16 (2003) 596
2. Usami N., Alguno A., Ujihara T., Fujiwara K., Sazaki G., Nakajima K., Sawano K., and Shiraki Y. Sci. Technol. Adv. Mater. 4 (2003) 367
3. Chaparro S.A., Zhang Y., Drucker J., Chandrasekhar D., and Smith D.J. J. Appl. Phys. 87 (2000) 2245
4. Yam V., Le Thanh V., Débarre D., Zheng Y., and Bouchier D. Appl. Surf. Sci. 224 (2004) 143
5. Ratto F., Rosei F., Cherifi S., Locatelli A., Fontana S., Heun S., Szkutnik P.D., Sgarlata A., Motta N., and De Crescenzi M. Appl. Phys. Lett. 84 (2004) 4526
6. Das A.K., Ghose S.K., Dev B.N., Kuri G., and Yang T.R. Appl. Phys. Sci. 165 (2000) 260
7. Levine J.R., Cohen J.B., Chung Y.W., and Georgopoulos P. J. Appl. Cryst. 22 (1989) 528
8. Amenitsch H., Bernstorff S., and Laggner P. Rev. Sci. Instrum. 66 (1995) 1624
9. Revenant C., Leroy F., Lazzari R., Renaud G., and Henry C.R. Phys. Rev. B 69 (2004) 035411
10. Stangl J., Holy V., and Bauer G. Rev. Mod. Phys. 76 (2004) 725
11. Pivac B., Kovačević I., Dubček P., Radić N., Bernstorff S., and Slaoui A. Thin Solid Films 511-512 (2006) 153
12. Naudon A., Babonneau D., Thiaudiere D., and Lequien S. Physica B 283 (2000) 69
13. Paniago R., Metzger H., Raucher M., Kovats Z., Peisl J., Schulze J., Eisele I., and Ferrer S. J. Appl. Cryst. 33 (2000) 433
14. Lazzari R. J. Appl. Cryst. 35 (2002) 406
15. Kovačević I., Dubček P., Zorc H., Radić N., Pivac B., and Bernstorff S. Vacuum 80 (2005) 69
16. Ditchfield R., and Seebauer E.G. Phys. Rev. Lett. 82 (1999) 1185
17. Campione M., Cartotti M., Pinotti E., Sassella A., and Borghesi A. J. Vac. Sci. Technol., A 22 (2004) 482
18. Krikorian E., and Sneed R.J. J. Appl. Phys. 37 (1966) 3665
19. Chason E., Tsao J.Y., Horn K.M., Picraux S.T., and Atwater H.A. J. Vac. Sci. Technol., A 8 (1990) 2507