Facet investigation in selective epitaxial growth of Si and SiGe on (001) Si for optoelectronic devices

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 3, 1998, Pages 1549-1554

  Vescan, L ^a   Grimm, K ^a   Dieker, C ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000756651     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589937     Document Type: Article

References (25)

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