Reduced pressure chemical vapor deposition of Ge thick layers on Si(0 0 1), Si(0 1 1) and Si(1 1 1)

Journal of Crystal Growth

Volumn 310, Issue 24, 2008, Pages 5287-5296

  Hartmann, J M ^a   Papon, A M ^a   Destefanis, V ^b   Billon, T ^a  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

Author keywords

A.3. Chemical vapor deposition processes; B.2. Semiconducting germanium

Indexed keywords

ABS RESINS; CHEMICAL VAPOR DEPOSITION; DEFECT DENSITY; KETONES; MICROSCOPIC EXAMINATION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON; SILICON WAFERS; STACKING FAULTS; VAPORS;

A.3. CHEMICAL VAPOR DEPOSITION PROCESSES; B.2. SEMICONDUCTING GERMANIUM; DEPOSITION TIMES; DISLOCATION DENSITIES; GE FILMS; GE(0 0 1); HIGH TEMPERATURES; ISLANDING; LOW TEMPERATURES; MISFIT DISLOCATIONS; NANOMETRES; PARTIAL DISLOCATIONS; REDUCED PRESSURES; RMS ROUGHNESSES; ROOT MEAN SQUARES; STRUCTURAL STUDIES; SURFACE ORIENTATIONS; THICK LAYERS;

GERMANIUM;

EID: 56949101301     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.08.062     Document Type: Article

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