Electrical characterisation and reliability of HfO2 and Al2O3-HfO2 MIM capacitors

Microelectronics Reliability

Volumn 43, Issue 8, 2003, Pages 1259-1266

  Mondon, F ^a,b   Blonkowski, S ^c  

^a CEA LETI   (France)

^b UNIV GRENOBLE ALPES   (France)

^c STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; MATHEMATICAL MODELS; MIM DEVICES; THERMAL EFFECTS; WEAR OF MATERIALS;

GATE VOLTAGE POLARITIES;

CAPACITORS;

EID: 0042164581     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(03)00181-1     Document Type: Conference Paper

References (18)

1. Wilk G.D., Wallace R.M., Anthony J.M. High-. K gate dielectrics: current status and material properties considerations J. Appl. Phys. 89(10):2001;5243.
2. 2/TiN/W capacitors and body-slightly tied SOI. 834. IEEE, IEDM Tech. Dig. 2002;831-834.
3. 2 dielectrics. IEEE Electron Dev. Lett. 23(9):2002;514.
4. 5. J. Appl. Phys. 88(2):2000;850.
5. Robertson J. Band offsets of wide-band-gap oxides and implications for future electronic devices. J. Vac. Sci. Technol. B. 18:2000;1785.
6. Carter RJ, Cartier E, Caymax M, DeGendt S, Degraeve R, Groeseneken G, et al. Electrical characterization of high- k materials prepared by atomic layer CVD. Proc. IWGI, Tokyo, 2001. p. 94-9.
7. Zhao X., Vanderbilt D. First-principle study of structural, vibrational and lattice dielectric properties of hafnium oxide. Phys. Rev. B. 65:2002;233106.
8. Gusev E.P., Cartier E., Buchanan D.A., Gribeliuk M., Copel M., Okorn-Schmidt H.et al. Ultrathin high-. k metal oxides on silicon: processing, characterization and integration issues Microelectron. Eng. 59:2001;341-349.
9. Sze S.M. Physics of semiconductor devices. 1981;John Wiley.
10. Mc Pherson J., Kim J., Shanware A., Mogul H., Rodriguez J. Proposed universal relationship between dielectric breakdown and dielectric constant. IEEE IEDM Tech. Dig. 2002;633-636.
11. 2 and HfAlO gates stacks. IEEE IEDM Tech. Dig. 2002;731-734.
12. Zhu W.J., Ma T.P., Tamagawa T., Kim J., Di Y. Current transport in metal/hafnium oxide/silicon structure. IEEE Electron Dev. Lett. 23:2002;97-99.
13. Lamb D.R. Electrical conduction mechanisms in thin insulating films. 1967;Methuen.
14. Stathis J.H. Percolation model for gate oxide breakdown. J. Appl. Phys. 86:1999;5757.
15. Kauerauf T., Degraeve R., Cartier E., Soens C., Groeseneken G. Low Weibull slope of breakdown distributions in high-. k layers IEEE Electron Dev. Lett. 23:2002;215.
16. 2 gate dielectrics. IEEE Electron Dev. Lett. 23:2002;594.
17. Alam M.A., Smith R.K., Weir B.E., Silverman P.J. Statistically independent soft breakdowns redefine oxide reliability specifications. IEEE, IEDM Tech. Dig. 2002;151-154.
18. Houssa M., Nigam T., Mertens P.W., Heyns M.M. Model for the current-voltage characteristics of ultrathin gate oxides after soft breakdown. J. Appl. Phys. 84(8):1998;4351.