Breakdown in the metal/high-k gate stack: Identifying the "weak link" in the multilayer dielectric

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Bersuker, G ^a   Heh, D ^a   Young, C ^a   Park, H ^a   Khanal, P ^a   Larcher, L ^b   Padovani, A ^c   Lenahan, P ^d   Ryan, J ^d   Lee, B H ^a   Tseng, H ^a   Jammy, R ^a  

^a SEMATECH   (United States)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^c UNIVERSITY OF FERRARA   (Italy)

^d PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION MECHANISMS; GATE STACKS; HIGH-K GATE STACKS; INTERFACIAL LAYERS; METAL/HIGH-K GATES; MULTI-LAYER DIELECTRICS; WEAK LINKS;

DEGRADATION; ELECTRON DEVICES; OXYGEN; OXYGEN VACANCIES; SILICON COMPOUNDS;

LOGIC GATES;

EID: 64549083594     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796816     Document Type: Conference Paper

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