Thermal properties of ultrathin hafnium oxide gate dielectric films

IEEE Electron Device Letters

Volumn 30, Issue 12, 2009, Pages 1269-1271

  Panzer, Matthew A ^a   Shandalov, Michael ^b   Rowlette, Jeremy A ^a   Oshima, Yasuhiro ^b   Chen, Yi Wei ^b   McIntyre, Paul C ^b   Goodson, Kenneth E ^a  

^a Stanford University   (United States)

^b STANFORD UNIVERSITY   (United States)

Author keywords

Hafnium oxide; Picosecond pump probe thermometry; Thermal conductivity; Thermal interface resistance

Indexed keywords

HAFNIUM OXIDES; INTERFACE RESISTANCE; PICOSECONDS; PUMP-PROBE; ROOM TEMPERATURE; TEMPERATURE DEPENDENCE; THERMAL CONDUCTION; THERMAL INTERFACES; THERMAL PROPERTIES; THERMOREFLECTANCE; ULTRA-THIN;

DIELECTRIC FILMS; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM; HAFNIUM COMPOUNDS; OXIDE FILMS; OXIDES; PROBES; PUMPS; TEMPERATURE SENSORS; THERMAL CONDUCTIVITY; THERMOANALYSIS; THERMODYNAMIC PROPERTIES; THERMOMETERS; ULTRATHIN FILMS;

THERMAL CONDUCTIVITY OF SOLIDS;

EID: 70549091173     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2032937     Document Type: Article

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