A physics-based model of the dielectric breakdown in HfO2 for statistical reliability prediction

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2011, Pages

  Vandelli, Luca ^a   Padovani, Andrea ^a   Larcher, Luca ^a   Bersuker, Gennadi ^b   Yum, Jung ^b   Pavan, Paolo ^a  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b SEMATECH   (United States)

Author keywords

breakdown statistics; dielectric breakdown; forming; HfO 2; high k; RRAM; TDDB

Indexed keywords

BREAKDOWN STATISTICS; DIELECTRIC BREAKDOWNS; HFO 2; HIGH-K; RRAM; TDDB;

ELECTRIC BREAKDOWN; ELECTRIC PROPERTIES; HAFNIUM OXIDES; MIM DEVICES; RANDOM ACCESS STORAGE; RELIABILITY; TRANSITION METAL COMPOUNDS; TRANSITION METALS;

DIELECTRIC MATERIALS;

EID: 79959296001     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2011.5784582     Document Type: Conference Paper

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