A physical model of the temperature dependence of the current through SiO2/HfO2 stacks

IEEE Transactions on Electron Devices

Volumn 58, Issue 9, 2011, Pages 2878-2887

  Vandelli, L ^a,b   Padovani, A ^a,b   Larcher, L ^a,b   Southwick III, R G ^c   Knowlton, W B ^c   Bersuker, G ^d  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b Italian University Nano Electronics Team IUNET   (Italy)

^c Boise State University   (United States)

^d SEMATECH   (United States)

Author keywords

Dielectric defects; high k; leakage current; modeling; oxide reliability; temperature; trap assisted tunneling

Indexed keywords

CHARGE TRANSPORT MECHANISMS; DIELECTRIC DEFECTS; DIELECTRIC STACK; DOMINANT MECHANISM; ELECTRICALLY ACTIVE DEFECTS; GATE DIELECTRIC STACKS; HIGH-K; INJECTED CARRIERS; IONIZATION ENERGIES; IV CHARACTERISTICS; MEASUREMENT DATA; MULTIPHONONS; NEGATIVE GATE VOLTAGES; OXIDE RELIABILITY; PHYSICAL MODEL; SIMULATION RESULT; STRONG INVERSION; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE; TRAP ASSISTED TUNNELING; TRAP PARAMETERS; TRAP SITES;

COMPUTER SIMULATION; DIELECTRIC MATERIALS; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM OXIDES; LEAKAGE (FLUID); TEMPERATURE DISTRIBUTION;

SILICON COMPOUNDS;

EID: 80052078629     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2158825     Document Type: Article

References (41)

1. J. Robertson, "High dielectric constant gate oxides for metal oxide Si transistors," Rep. Prog. Phys., vol. 69, no. 2, pp. 327-396, Feb. 2006. (Pubitemid 43121643)
2. M. R. Herrmann and A. Schenk, "Field and high-temperature dependence of the long term charge loss in erasable programmable read only memories: Measurements and modeling," J. Appl. Phys., vol. 77, no. 9, pp. 4522-4540, May 1995.
3. F. Jimènez-Molinos, A. Palma, F. Gámiz, J. Banqueri, and J. A. López- Villanueva, "Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures," J. Appl. Phys., vol. 90, no. 7, pp. 3396-3404, Oct. 2001. (Pubitemid 33596987)
4. O. Blank, H. Reisinger, R. Stengl, M. Gutsche, F. Wiest, V. Capodieci, J. Schulze, and I. Eisele, "A model for multistep trap-assisted tunneling in high-k dielectrics," J. Appl. Phys., vol. 97, no. 4, p. 044147, 2005.
5. B. Govoreanu, P. Blomme, M. Rosmeulen, J. V. Houdt, and K. De Meyer, "A model for tunneling current in multi-layer tunnel dielectrics," Solid State Electron., vol. 47, no. 6, pp. 1045-1053, Jun. 2003.
6. L. F. Mao, "Modeling of temperature dependence of the leakage current through a hafnium silicate gate dielectric in a MOS device," Semicond. Sci. Technol., vol. 22, no. 11, pp. 1203-1208, Nov. 2007.
7. A. Campera, G. Iannaccone, and F. Crupi, "Modeling of tunneling currents in Hf-based gate stacks as a function of temperature and extraction of material parameters," IEEE Trans. Electron Devices, vol. 54, no. 1, pp. 83-89, Jan. 2007. (Pubitemid 46061028)
8. F. Sacconi, J. M. Jancu, M. Povolotskyi, and A. Di Carlo, "Full-band tunneling in high-k oxide MOS structures," IEEE Trans. Electron Devices, vol. 54, no. 12, pp. 3168-3176, Dec. 2007.
9. 2/TiN capacitors," IEEE Trans. Electron Devices, vol. 58, no. 2, pp. 327-334, Feb. 2011.
10. 2 interface," J. Appl. Phys., vol. 100, no. 4, p. 043708, Aug. 2006.
11. 3 and HfAlOx gate stacks," IEEE Trans. Electron Devices, vol. 51, no. 10, pp. 1679-1687, Oct. 2004.
12. 2 stacks with FUSI, TiN, Re gates," in VLSI Symp. Tech. Dig., 2006, pp. 23-25. (Pubitemid 351424107)
13. 2 gate dielectric stacks," Appl. Phys. Lett., vol. 80, no. 11, pp. 1975-1977, Mar. 2002.
14. W. J. Zhu, T. P. Ma, T. Tamagawa, J. Kim, and Y. Di, "Current transport in metal/hafnium oxide/silicon structure," IEEE Electron Device Lett., vol. 23, no. 2, pp. 97-99, Feb. 2002. (Pubitemid 34504411)
15. 2 MOS gate stacks," in Proc. IIRW, 2008, pp. 48-54.
16. 2 MOS devices," IEEE Trans. Device Mater. Rel., vol. 10, no. 2, pp. 201-207, Jun. 2010.
17. G. Bersuker, D. Heh, C. Young, H. Park, P. Khanal, L. Larcher, A. Padovani, P. Lenahan, J. Ryan, B. H. Lee, H. Tseng, and R. Jammy, "Breakdown in the metal/high-k gate stack: Identifying "weak link" in the multilayer dielectric," in IEDM Tech. Dig., 2008, pp. 791-794.
18. G. Bersuker, D. C. Gilmer, D. Veksler, J. Yum, H. Park, S. Lian, L. Vandelli, A. Padovani, L. Larcher, K.McKenna, A. Shluger, V. Iglesias, M. Porti, M. Nafria, W. Taylor, P. D. Kirsch, and R. Jammy, "Metal oxide RRAM switching mechanism based on conductive filament microscopic properties," in IEDM Tech. Dig., 2010, pp. 456-459.
19. L. Larcher, "Simulation of leakage currents in MOS and Flash memory devices with a new multiphonon trap-assisted-tunneling model," IEEE Trans. Electron Devices, vol. 50, no. 5, pp. 1246-1253, May 2003.
20. 2/high-k dielectrics stacks for Non-Volatile-Memory applications," in Proc. IEEE Int. Rel. Phys. Symp., 2008, pp. 616-620.
21. 2/high-k stacks," in Proc. ESSDERC, 2010, pp. 388-391.
22. C. R. Viswanathan, R. Divakaruni, and J. Kizziar, "Low temperature CV dispersion in MOS devices," IEEE Electron Device Lett., vol. 12, no. 9, pp. 503-505, Sep. 1991. (Pubitemid 21717675)
23. H. Bachofer, H. Resinger, E. Bertagnolli, and H. von Philipsborn, "Transient conduction in multidielectric silicon-oxide-nitride-oxide semiconductor structures," J. Appl. Phys., vol. 89, no. 5, pp. 2791-2800, Mar. 2001. (Pubitemid 33662186)
24. L. Larcher, P. Pavan, F. Pellizzer, and G. Ghidini, "A new model of gate capacitance as a simple tool to extract MOS parameters," IEEE Trans. Electron Devices, vol. 48, no. 5, pp. 935-945, May 2001. (Pubitemid 32444259)
25. S. M. Sze, Physics of Semiconductor Devices. New York: Wiley- Interscience, 1981.
26. N. Yang, W. K. Henson, J. R. Hauser, and J. J. Wortman, "Modeling study of ultrathin gate oxides using direct tunneling current and capacitance-voltage measurements in MOS devices," IEEE Trans. Electron Devices, vol. 46, no. 7, pp. 1464-1471, Jul. 1999.
27. C. B. Duke, Tunneling in Solids. New York: Academic, 1969.
28. C. H. Henry and D. V. Lang, "Non radiative capture and recombination by multiphonon emission in GaAs and GaP," Phys. Rev. B, Condens. Matter, vol. 15, no. 2, pp. 989-1016, Jan. 1977.
29. M. V. Fischetti, D. A. Neumayer, and E. A. Cartier, "Effective electron mobility in Si inversion layers in metal-oxide-semiconductor systems with a high-k insulator: The role of remote phonon scattering," J. Appl. Phys., vol. 90, no. 9, pp. 4587-4608, Nov. 2001. (Pubitemid 33598654)
30. P. F. Barbara, T. J. Meyer, and M. A. Ratner, "Contemporary issues in electron transfer research," J. Phys. Chem., vol. 100, no. 31, pp. 13148- 13168, Jan. 1996. (Pubitemid 126821052)
31. K. Huang and A. Rhys, "Theory of light absorption and non-radiative transition in F-centres," Proc. R. Soc. Lond. A, Math. Phys. Sci., vol. 204, no. 1078, pp. 406-423, Dec. 1950.
32. A. Gehring and S. Selberherr, "Modeling of tunneling current and gate dielectric reliability for Nonvolatile Memory Devices," IEEE Trans. Electron Devices, vol. 4, no. 3, pp. 306-319, Sep. 2004. (Pubitemid 40049407)
33. 2 triple layer gate dielectrics for advanced MIS devices," J. Mater. Sci. Mater. Electron., vol. 19, no. 8/9, pp. 902-907, Sep. 2008.
34. G. Bersuker, C. S. Park, J. Barnett, P. S. Lysaght, P. D. Kirsch, C. D. Young, R. Choi, B. H. Lee, B. Foran, K. van Benthem, S. J. Pennycook, P. M. Lenahan, and J. T. Ryan, "The effect of interfacial layer properties on the performance of Hf-based gate stack devices," J. Appl. Phys., vol. 100, no. 9, p. 094108, Nov. 2006.
35. 2 and HfAlO," Appl. Phys. Lett., vol. 83, no. 13, pp. 2605- 2607, Sep. 2003.
36. 2 gate stacks: Depth distribution and identification," in Proc. IIRW, 2007, pp. 94-97.
37. A. V. Kimmel, P. V. Sushko, A. L. Shluger, and G. Bersuker, "Positive and negative oxygen vacancies in amorphous silica," Electrochem. Soc. Trans., vol. 19, no. 2, pp. 3-17, 2009.
38. 4: Updates and additions," J. Electrochem. Soc., vol. 142, no. 7, pp. 2508-2517, 1995.
39. 2 calculated with periodic and embedded cluster density functional theory," Phys. Rev. B, Condens. Matter, vol. 75, no. 20, p. 205-336, May 2007.
40. A. S. Foster, F. Lopez Gejo, A. L. Shluger, and R.M. Nieminen, "Vacancy and interstitial defects in hafnia," Phys. Rev. B, Condens. Matter, vol. 65, no. 17, p. 174- 117, May 2002.
41. E. P. Friis, Y. I. Kharkats, A. M. Kuznetsov, and J. Ulstrup, "In situ scanning tunneling microscopy of a redox molecule as a vibrationally coherent electronic three-level process," J. Phys. Chem. A, vol. 102, pp. 7851- 7859, 1998. (Pubitemid 128611538)